Descripción
BPW77NA Fototransistor
El BPW77NA es un fototransistor NPN de silicio con alta sensibilidad radiante, en un encapsulado herméticamente sellado TO-18, con terminal base. Es sensible a la radiación visible y cercana al infrarrojo.
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Su lente de cristal con un ángulo de visión de ± 10° lo hace insensible a la luz ambiente.
Un terminal base está disponible para activar la polarización y el control de sensibilidad.
Aplicaciones
Detector en circuitos de control y accionamiento electrónicos.
Características
Categoría de producto: Fototransistores.
Encapsulado: TO-18
Montaje: Through Hole
Longitud de onda máxima: 850 nm
Máxima corriente activada de colector: 50mA
Máx. voltaje VCEO colector-emisor: 70 V
Tensión de disparo colector-emisor: 70V
Voltaje de saturación colector-emisor: 0.15 V
Corriente oscura: 100 nA
Disipación de potencia: 250 mW
Temperatura de trabajo mínima: -40 C
Temperatura de trabajo máxima: +125 C
Grados del ángulo de media intensidad: 10 deg
Longitud de onda: 850 nm
Corriente de luz: 15 mA
Altura: 6.15 mm
Longitud: 5.5 mm
Ancho: 5.5 mm
Sustituto
BPW77NB
DataSheet
BPW77NA